base/jquery-ui.min.css"/> High-Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth - Nano Letters (ACS Publications) bar" content="no"/> bots" content="noarchive,nofollow" />by Wafer-Scale Bottom-up Growth" />bak" />bject" content="Bottom-up; VLS; nanowire; III鈭扸; transistor; VLSI" />bled in perfectly parallel arrays to form double-channel T-gated NW array-based high electron mobility transistors (HEMTs) with DC and RF performance surpassing those for all field-effect transistors (FETs) with VLS NWs, carbon nanotubes (CNTs), or graphene channels in-plane with the substrate. For a planar GaAs NW array-based HEMT with 150 nm gate length and 2 V drain bias, the on/off ratio (ION/IOFF), cutoff frequency (fT), and maximum oscillation frequency (fmax) are 104, 33, and 75 GHz, respectively. By characterizing more than 100 devices on a 1.5 脳 1.5 cm2 chip, we prove chip-level electrical uniformity of the planar NW array-based HEMTs and verify the feasibility of using this bottom-up planar NW technology for post-Si large-scale nanoelectronics." />blisher" content="American Chemical Society" />ber 22, 2014" /> <body class="journal article pod"> bs%2F10.1021%2Fnl503596j&pubId=419762264" style="text-decoration: none; border: none;">