UV/O3 Generated Graphene Nanomesh: Formation Mechanism, Properties, and FET Studies

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• 作者：Da-Peng Yang ; Xiansong Wang ; Xiaojun Guo ; Xiao Zhi ; Kan Wang ; Chao Li ; Gaoshan Huang ; Guangxia Shen ; Yongfeng Mei ; Daxiang Cui
• 刊名：Journal of Physical Chemistry C
• 出版年：2014
• 出版时间：January 9, 2014
• 年：2014
• 卷：118
• 期：1
• 页码：725-731
• 全文大小：345K
• ISSN：1932-7455

文摘

The bandgap engineering of graphene is a challenging task for its potential application. Forming unique structures such as nanoribbons or nanomeshes is an effective way to open up a bandgap in graphene. In this work, a graphene nanomesh (GNM) was prepared through UV-mediated oxidation of a graphene oxide (GO) film at atmosphere. Atomic force microscopy (AFM) was used to track the evolution of the surface morphology of GO during the irradiation. It was observed that a nanoporous network structure was progressively produced in the basal plane, which can be attributed to the fact that highly reactive oxygen species preferentially attack sp³ carbon-rich regions of the GO. In particular, the as-prepared GNM shows interesting semiconducting characteristics and photoluminescence (PL) phenomenon, which make it become a promising candidate for the use of electronics, optoelectronics, and biomedical engineering. Finally, the field-effect transistors (FETs) were fabricated using the as-prepared GNM as the active channel. The measured electrical characteristics indicate that the use of UV/O₃ is an available choice to open the bandgap of graphene and tune its properties for optoelectronics or biomedical applications.