用户名: 密码: 验证码:
Mechanisms of Electron-Beam-Induced Damage in Perovskite Thin Films Revealed by Cathodoluminescence Spectroscopy
详细信息    查看全文
文摘
Electron-beam-induced damages in methylammonium lead triiodide (MAPbI3) perovskite thin films were studied by cathodoluminescence (CL) spectroscopy. We find that high-energy electron beams can significantly alter perovskite properties through two distinct mechanisms: (1) defect formation caused by irradiation damage and (2) phase transformation induced by electron-beam heating. The former mechanism causes quenching and broadening of the excitonic peaks in CL spectra, whereas the latter results in new peaks with higher emission photon energy. The electron-beam damage strongly depends on the electron-beam irradiation conditions. Although CL is a powerful technique for investigating the electronic properties of perovskite materials, irradiation conditions should be carefully controlled to avoid any significant beam damage. In general, reducing acceleration voltage and probing current, coupled with low-temperature cooling, is more favorable for CL characterization and potentially for other scanning electron-beam-based techniques as well. We have also shown that the stability of perovskite materials under electron-beam irradiation can be improved by reducing defects in the original thin films. In addition, we investigated effects of electron-beam irradiation on formamidinium lead triiodide (FAPbI3) and CsPbI3 thin films. FAPbI3 shows similar behavior as MAPbI3, whereas CsPbI3 displays higher resistance to electron-beam damage than its organic鈥搃norganic hybrid counterparts. Using CsPbI3 as a model material, we observed nonuniform luminescence in different grains of perovskite thin films. We also discovered that black-to-yellow phase transformation of CsPbI3 tends to start from the junctions at grain boundaries.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700