Nanoscale Measurement of Laser-Induced Temperature Rise and Field Evaporation Effects in CdTe and GaN

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• 作者：David R. Diercks ; Brian P. Gorman
• 刊名：Journal of Physical Chemistry C
• 出版年：2015
• 出版时间：September 3, 2015
• 年：2015
• 卷：119
• 期：35
• 页码：20623-20631
• 全文大小：420K
• ISSN：1932-7455

文摘

The measurement of laser-induced temperature change and its influence on the field evaporation behavior in nanoscale CdTe and GaN specimens was assessed through systematic studies using laser pulsed atom probe tomography. For CdTe, the laser was shown to induce a linear thermal response in the material. Using the determined relationships, a phase map of the field evaporation behavior was created. This shows that at high base temperatures, high laser energies, or low fields, significant Cd sublimation occurs, leading to apparently Te-rich measured compositions. In contrast, the highest fields result in simultaneous evaporation of multiple Te species, leading to apparently Cd-rich measured compositions. For GaN, increasing laser energy reduced the applied bias necessary for a given detection rate, whereas base temperature changes produced no significant effect on the evaporation behavior, indicative of a largely athermal evaporation mechanism. Similarly, the laser energy and bias affected the measured compositions, whereas the base temperature did not. Additionally, the field evaporation behavior in GaN appears unusual in that there is a strong crystallographic dependence resulting in a nonuniform field being maintained across the apex of the specimen. These methods are useful beyond atom probe analyses for elucidating information about bonding and optoelectronic properties.