Ozone-Based Atomic Layer Deposition of Crystalline V2O5 Films for High Performance Electrochemical Energy Storage

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• 作者：Xinyi Chen ; Ekaterina Pomerantseva ; Parag Banerjee ; Keith Gregorczyk ; Reza Ghodssi ; Gary Rubloff
• 刊名：Chemistry of Materials
• 出版年：2012
• 出版时间：April 10, 2012
• 年：2012
• 卷：24
• 期：7
• 页码：1255-1261
• 全文大小：474K
• 年卷期：v.24,no.7(April 10, 2012)
• ISSN：1520-5002

文摘

A new atomic layer deposition (ALD) process for V₂O₅ using ozone (O₃) as oxidant has been developed that resulted in crystalline V₂O₅ thin films which are single-phase and orthorhombic on various substrates (silicon, Au-coated stainless steel, and anodic aluminum oxide (AAO)) without any thermal post-treatment. Within a fairly narrow temperature window (170鈥?85 掳C), this low temperature process yields a growth rate of 0.27 脜/cycle on Si. It presents good uniformity on planar substrates. Excellent conformality enables deposition into high aspect ratio (AR) nanopores (AR > 100), as needed for fabrication of three-dimensional (3D) nanostructures for next generation electrochemical energy storage devices. V₂O₅ films obtained using O₃-based ALD showed superior electrochemical performance in lithium cells, with initial specific discharge capacity of 142 mAh/g in the potential range of 2.6鈥?.0 V, as well as excellent rate capability and cycling stability. These benefits are attributed primarily to the crystallinity of the material and to fast transport through the thin active storage layers used.

Keywords:

atomic layer deposition; vanadium oxide; ozone; electrochemical energy storage