Growth and Raman Spectra of Single-Crystal Trilayer Graphene with Different Stacking Orientations
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- 作者：Haiming Zhao ; Yung-Chang Lin ; Chao-Hui Yeh ; He Tian ; Yu-Chen Chen ; Dan Xie ; Yi Yang ; Kazu Suenaga ; Tian-Ling Ren ; Po-Wen Chiu
- 刊名：ACS Nano
- 出版年：2014
- 出版时间：October 28, 2014
- 年：2014
- 卷：8
- 期：10
- 页码：10766-10773
- 全文大小：648K
- ISSN：1936-086X
文摘
Understanding the growth mechanism of graphene layers in chemical vapor deposition (CVD) and their corresponding Raman properties is technologically relevant and of importance for the application of graphene in electronic and optoelectronic devices. Here, we report CVD growth of single-crystal trilayer graphene (TLG) grains on Cu and show that lattice defects at the center of each grain persist throughout the growth, indicating that the adlayers share the same nucleation site with the upper layers and these central defects could also act as a carbon pathway for the growth of a new layer. Statistics shows that ABA, 30鈥?0, 30鈥揂B, and AB鈥?0 make up the major stacking orientations in the CVD-grown TLG, with distinctive Raman 2D characteristics. Surprisingly, a high level of lattice defects results whenever a layer with a twist angle of 胃 = 30掳 is found in the multiple stacks of graphene layers.