Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy

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• 作者：Heather M. Hill ; Albert F. Rigosi ; Kwang Taeg Rim ; George W. Flynn ; Tony F. Heinz
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：August 10, 2016
• 年：2016
• 卷：16
• 期：8
• 页码：4831-4837
• 全文大小：443K
• 年卷期：0
• ISSN：1530-6992

文摘

Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS), we examine the electronic structure of transition metal dichalcogenide heterostructures (TMDCHs) composed of monolayers of MoS₂ and WS₂. STS data are obtained for heterostructures of varying stacking configuration as well as the individual monolayers. Analysis of the tunneling spectra includes the influence of finite sample temperature, yield information about the quasi-particle bandgaps, and the band alignment of MoS₂ and WS₂. We report the band gaps of MoS₂ (2.16 ± 0.04 eV) and WS₂ (2.38 ± 0.06 eV) in the materials as measured on the heterostructure regions and the general type II band alignment for the heterostructure, which shows an interfacial band gap of 1.45 ± 0.06 eV.