Enhanced p-Type Conductivity of ZnTe Nanoribbons by Nitrogen Doping

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• 作者：Shanying Li ; Yang Jiang ; Di Wu ; Li Wang ; Honghai Zhong ; Bo Wu ; Xinzheng Lan ; Yongqiang Yu ; Zhuangbing Wang ; Jiansheng Jie
• 刊名：Journal of Physical Chemistry C
• 出版年：2010
• 出版时间：May 6, 2010
• 年：2010
• 卷：114
• 期：17
• 页码：7980-7985
• 全文大小：252K
• 年卷期：v.114,no.17(May 6, 2010)
• ISSN：1932-7455

文摘

Single-crystalline intrinsic and N-doped p-type ZnTe nanoribbons (NRs) were synthesized via the thermal evaporation method in argon-mixed hydrogen and nitrogen-mixed ammonia, respectively. Both intrinsic and doped ZnTe nanoribbons had zinc blende structure and uniform geometry. X-ray diffraction peaks of N-doped ZnTe nanoribbons had an obvious shift toward higher angle direction as compared with intrinsic ZnTe. X-ray photoelectron spectroscopy detection confirmed that the dopant content of nitrogen in ZnTe nanoribbons was close to 1%. Field-effect transistors based on both intrinsic and N-doped ZnTe nanoribbons were constructed. Electrical measurements demonstrated that N-doping led to a substantial enhancement in p-type conductivity of ZnTe nanoribbons with a high hole mobility of 1.2 cm⁻² V⁻¹ S⁻¹ and a low resistivity of 0.14 Ω cm in contrast to the 6.2 × 10⁻³ cm⁻² V⁻¹ S⁻¹ and 45.1 Ω cm for intrinsic nanoribbons. Moreover, the defect reaction mechanism was proposed to explain the p-type behaviors of both the intrinsic and the N-doped ZnTe nanoribbons.The ZnTe nanoribbons with enhanced p-type conductivity may have important potential applications in nanoelectronic and optoelectronic devices.