High-Performance Flexible Graphene Field Effect Transistors with Ion Gel Gate Dielectrics
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- 作者：Beom Joon Kim ; Houk Jang ; Seoung-Ki Lee ; Byung Hee Hong ; Jong-Hyun Ahn ; Jeong Ho Cho
- 刊名：Nano Letters
- 出版年：2010
- 出版时间：September 8, 2010
- 年：2010
- 卷：10
- 期：9
- 页码：3464-3466
- 全文大小：288K
- 年卷期：v.10,no.9(September 8, 2010)
- ISSN：1530-6992
文摘
A high-performance low-voltage graphene field-effect transistor (FET) array was fabricated on a flexible polymer substrate using solution-processable, high-capacitance ion gel gate dielectrics. The high capacitance of the ion gel, which originated from the formation of an electric double layer under the application of a gate voltage, yielded a high on-current and low voltage operation below 3 V. The graphene FETs fabricated on the plastic substrates showed a hole and electron mobility of 203 ± 57 and 91 ± 50 cm2/(V·s), respectively, at a drain bias of −1 V. Moreover, ion gel gated graphene FETs on the plastic substrates exhibited remarkably good mechanical flexibility. This method represents a significant step in the application of graphene to flexible and stretchable electronics.