Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot

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• 作者：Ruoyu Li ; Fay E. Hudson ; Andrew S. Dzurak ; Alexander R. Hamilton
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：November 11, 2015
• 年：2015
• 卷：15
• 期：11
• 页码：7314-7318
• 全文大小：363K
• ISSN：1530-6992

文摘

In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of interdot level spacing and magnetic field. With varied interdot tunnel coupling, we can identify different dominant spin relaxation mechanisms. Application of a strong out-of-plane magnetic field causes an avoided singlet鈥搕riplet level crossing, from which the heavy hole g-factor 鈭?.93 and the strength of spin鈥搊rbit interaction 鈭?10 渭eV can be obtained. The demonstrated strong spin鈥搊rbit interaction of heavy holes promises fast local spin manipulation using only electric fields, which is of great interest for quantum information processing.