Surface Modification of a Polyimide Gate Insulator with an Yttrium Oxide Interlayer for Aqueous-Solution-Processed ZnO Thin-Film Transistors

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• 作者：Kwang-Suk Jang ; Duyoung Wee ; Yun Ho Kim ; Jinsoo Kim ; Taek Ahn ; Jae-Won Ka ; Mi Hye Yi
• 刊名：Langmuir
• 出版年：2013
• 出版时间：June 11, 2013
• 年：2013
• 卷：29
• 期：23
• 页码：7143-7150
• 全文大小：453K
• 年卷期：v.29,no.23(June 11, 2013)
• ISSN：1520-5827

文摘

We report a simple approach to modify the surface of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors. It is expected that the yttrium oxide interlayer will provide a surface that is more chemically compatible with the ZnO semiconductor than is bare polyimde. The field-effect mobility and the on/off current ratio of the ZnO TFT with the YO_x/polyimide gate insulator were 0.456 cm²/V路s and 2.12 脳 10⁶, respectively, whereas the ZnO TFT with the polyimide gate insulator was inactive.