CuAlO
2 exhibits a unique defect structure that is dependent on the synthesis route. High-temperature solid-state and low-temperature hydrothermal techniques are compared toillustrate how cation off-stoichiometry affects the electrical properties of CuAlO
2. A defectcomplex of Al on a Cu-site stabilized by two bound oxygen interstitials (Al
Cu2O
i' ')' ' is proposedwhich serves as an acceptor dopant to set the hole concentration. Trapping of holes (smallpolarons) by such complexes with decreasing temperature is proposed to account for thedecreasing carrier content with temperature. Hydrothermal samples exhibit approximatelyan order of magnitude increase in hole concentration relative to the solid-state synthesizedsamples; this is reflected in the electrical conductivity and may explain the variations inelectrical properties reported for CuAlO
2.