Scalable Growth of High Mobility Dirac Semimetal Cd3As2 Microbelts

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• 作者：Zhi-Gang Chen ; Cheng Zhang ; Yichao Zou ; Enze Zhang ; Lei Yang ; Min Hong ; Faxian Xiu ; Jin Zou
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：September 9, 2015
• 年：2015
• 卷：15
• 期：9
• 页码：5830-5834
• 全文大小：435K
• ISSN：1530-6992

文摘

Three-dimensional (3D) Dirac semimetals are 3D analogues of graphene, which display Dirac points with linear dispersion in k-space, stabilized by crystal symmetry. Cd₃As₂ has been predicted to be 3D Dirac semimetals and was subsequently demonstrated by angle-resolved photoemission spectroscopy. As unveiled by transport measurements, several exotic phases, such as Weyl semimetals, topological insulators, and topological superconductors, can be deduced by breaking time reversal or inversion symmetry. Here, we reported a facile and scalable chemical vapor deposition method to fabricate high-quality Dirac semimetal Cd₃As₂ microbelts; they have shown ultrahigh mobility up to 1.15 脳 10⁵ cm² V^鈭? s^鈭? and pronounced Shubnikov鈥揹e Haas oscillations. Such extraordinary features are attributed to the suppression of electron backscattering. This research opens a new avenue for the scalable fabrication of Cd₃As₂ materials toward exciting electronic applications of 3D Dirac semimetals.