Zn3P2鈥揨n3As2 Solid Solution Nanowires

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• 作者：Hyung Soon Im ; Kidong Park ; Dong Myung Jang ; Chan Su Jung ; Jeunghee Park ; Seung Jo Yoo ; Jin-Gyu Kim
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：February 11, 2015
• 年：2015
• 卷：15
• 期：2
• 页码：990-997
• 全文大小：496K
• ISSN：1530-6992

文摘

Semiconductor alloy nanowires (NWs) have recently attracted considerable attention for applications in optoelectronic nanodevices because of many notable properties, including band gap tunability. Zinc phosphide (Zn₃P₂) and zinc arsenide (Zn₃As₂) belong to a unique pseudocubic tetragonal system, but their solid solution has rarely been studied. Here In this study, we synthesized composition-tuned Zn₃(P_1鈥?i>xAs_x)₂ NWs with different crystal structures by controlling the growth conditions during chemical vapor deposition. A first type of synthesized NWs were single-crystalline and grew uniformly along the [110] direction (in a cubic unit cell) over the entire compositional range (0 鈮?x 鈮?1) explored. The use of an indium source enabled the growth of a second type of NWs, with remarkable cubic-hexagonal polytypic twinned superlattice and bicrystalline structures. The growth direction of the Zn₃P₂ and Zn₃As₂ NWs was also switched to [111] and [112], respectively. These structural changes are attributable to the Zn-depleted indium catalytic nanoparticles which favor the growth of hexagonal phases. The formation of a solid solution at all compositions allowed the continuous tuning of the band gap (1.0鈥?.5 eV). Photocurrent measurements were performed on individual NWs by fabricating photodetector devices; the single-crystalline NWs with [110] growth direction exhibit a higher photoconversion efficiency compared to the twinned crystalline NWs with [111] or [112] growth direction.