Double-Balanced Graphene Integrated Mixer with Outstanding Linearity

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• 作者：Hongming Lyu ; Huaqiang Wu ; Jinbiao Liu ; Qi Lu ; Jinyu Zhang ; Xiaoming Wu ; Junfeng Li ; Teng Ma ; Jiebin Niu ; Wencai Ren ; Huiming Cheng ; Zhiping Yu ; He Qian
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：October 14, 2015
• 年：2015
• 卷：15
• 期：10
• 页码：6677-6682
• 全文大小：478K
• ISSN：1530-6992

文摘

A monolithic double-balanced graphene mixer integrated circuit (IC) has been successfully designed and fabricated. The IC adopted the cross-coupled resistive mixer topology, integrating four 500 nm-gate-length graphene field-effect transistors (GFETs), four on-chip inductors, and four on-chip capacitors. Passive-first-active-last fabrication flow was developed on 200 mm CMOS wafers. CMOS back-end-of-line processes were utilized to realize most fabrication steps followed by GFET-customized processes. Test results show excellent output spectrum purity with suppressed radio frequency (RF) and local oscillation (LO) signals feedthroughs, and third-order input intercept (IIP3) reaches as high as 21 dBm. The results are compared with a fabricated single-GEFT mixer, which generates IIP3 of 16.5 dBm. Stand-alone 500 nm-gate-length GFETs feature cutoff frequency 22 GHz and maximum oscillation frequency 20.7 GHz RF performance. The double-balanced mixer IC operated with off-chip baluns realizing a print-circuit-board level electronic system. It demonstrates graphene鈥檚 potential to compete with other semiconductor technologies in RF front-end applications.