Defects-Mediated Energy Transfer in Red-Light-Emitting Eu-Doped ZnO Nanowire Arrays

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• 作者：Dandan Wang ; Guozhong Xing ; Ming Gao ; Lili Yang ; Jinghai Yang ; Tom Wu
• 刊名：Journal of Physical Chemistry C
• 出版年：2011
• 出版时间：November 24, 2011
• 年：2011
• 卷：115
• 期：46
• 页码：22729-22735
• 全文大小：1009K
• 年卷期：v.115,no.46(November 24, 2011)
• ISSN：1932-7455

文摘

We report on the photoluminescence in perfectly aligned Eu-doped ZnO nanowire arrays that are prepared on sapphire substrates using a vapor transport method with doped sol鈥揼el precursor powder as the vapor source. Under the UV light excitation, Eu³⁺-related red emission is observed in the Eu-doped ZnO nanowire arrays. By carrying out systematic temperature-dependent and time-resolved photoluminescence experiments, we identify a defect-mediated energy transfer pathway from the ZnO host to the Eu³⁺ ions. The energy transfer time increases from 9 to 130 ps after the nanowires are annealed in oxygen ambient, which reduces the defect concentration. This study suggests that defect engineering in bottom-up synthesis is a viable approach to modulate the energy transfer process, which may help to enable the future applications of ZnO-based nanomaterials in optoelectronics and full color displays.