New Twin Structures in GaN Nanowires

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• 作者：Sheng Dai ; Jiong Zhao ; Mo-rigen He ; Hao Wu ; Lin Xie ; Jing Zhu
• 刊名：The Journal of Physical Chemistry C
• 出版年：2013
• 出版时间：June 20, 2013
• 年：2013
• 卷：117
• 期：24
• 页码：12895-12901
• 全文大小：553K
• 年卷期：v.117,no.24(June 20, 2013)
• ISSN：1932-7455

文摘

Wurtzite-type gallium nitride (GaN) nanowires, with single crystalline and twin structures, were simultaneously synthesized via chemical vapor deposition (CVD) method. High-resolution transmission electron microscopy (HRTEM) was utilized to characterize different twin boundaries (TBs), (103) type TB in acute-angle twin structures, and (304) type TB in obtuse-angle twin structures. In special, the new (304) TB was reported and identified at atomic scale for the first time. With the assistance of molecular dynamics (MD) simulations, the growth mechanism to interpret the prevalence of these obtuse-angle twin nanowires with higher energy of TB is discussed.