文摘
In this study, we demonstrate development of p-Cu2O thin films through cathodic electrodeposition technique at constant current of 0.1 mA/cmp>2p> on Cu, Al, and indium tin oxide (ITO) substrates from basic CuSO4 solution containing Triton X-100 as the surfactant at 30鈥?5 掳C. The optical and morphological characterizations of the semiconductors have been carried out using UV鈥搗is spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy. The band gap energy of 鈭?.1 eV is recorded, whereas SEM reveals that the surface morphology is covered with Cu2O semiconductors. XRD analyses confirm that with change in substrate, the size of Cu2O 鈥渃ubic鈥?crystallites decreases from ITO to Al to Cu substrates. Photoelectrochemical characterizations under dark and illuminated conditions have been carried out through linear sweep voltammetry, chronoamperometry and electrochemical impedance spectroscopic analysis. The photoelectrochemical reduction of water (H2O 鈫?H2) in pH 4.9 aqueous solutions over the different substrates vary in the order of Cu > Al > ITO. The highest current of 4.6 mA/cmp>2p> has been recorded over the Cu substrate even at a low illumination of 35 mW/cmp>2p>, which is significantly higher than the values (2.4 mA/cmp>2p> on Au coated FTO or 4.07 mA/cmp>2p> on Cu foil substrate at an illumination of 100 mW/cmp>2p>) reported in literature.