Impact of Copper Overpressure on the Synthesis of Hexagonal Boron Nitride Atomic Layers
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- 作者：Michael S. Bresnehan ; Ganesh R. Bhimanapati ; Ke Wang ; David W. Snyder ; Joshua A. Robinson
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2014
- 出版时间：October 8, 2014
- 年：2014
- 卷：6
- 期：19
- 页码：16755-16762
- 全文大小：465K
- ISSN：1944-8252
文摘
Hexagonal boron nitride (h-BN) atomic layers are synthesized on polycrystalline copper foils via a novel chemical vapor deposition (CVD) process that maintains a vapor-phase copper overpressure during growth. Compared to h-BN films grown without a copper overpressure, this process results in a >10脳 reduction of 3-dimensional BN fullerene-like surface features, a reduction of carbon and oxygen contamination of 65% and 62%, respectively, an increase in h-BN grain size of >2脳, and an 89% increase in electrical breakdown strength.