Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2–BaTiO3–SrRuO3 Tunnel Junctions

详细信息    查看全文

• 作者：Tao LiPankaj Sharma ; Alexey Lipatov ; Hyungwoo LeeJung-Woo Lee ; Mikhail Y. Zhuravlev ; Tula R. Paudel ; Yuri A. Genenko ; Chang-Beom Eom ; Evgeny Y. Tsymbal ; Alexander Sinitskii ; Alexei Gruverman
• 刊名：Nano Letters
• 出版年：2017
• 出版时间：February 8, 2017
• 年：2017
• 卷：17
• 期：2
• 页码：922-927
• 全文大小：501K
• ISSN：1530-6992

文摘

Hybrid structures composed of ferroelectric thin films and functional two-dimensional (2D) materials may exhibit unique characteristics and reveal new phenomena due to the cross-interface coupling between their intrinsic properties. In this report, we demonstrate a symbiotic interplay between spontaneous polarization of the ultrathin BaTiO<sub>3sub> ferroelectric film and conductivity of the adjacent molybdenum disulfide (MoS<sub>2sub>) layer, a 2D narrow-bandgap semiconductor. Polarization-induced modulation of the electronic properties of MoS<sub>2sub> results in a giant tunneling electroresistance effect in the hybrid MoS<sub>2sub>–BaTiO<sub>3sub>–SrRuO<sub>3sub> ferroelectric tunnel junctions (FTJs) with an OFF-to-ON resistance ratio as high as 10<sup>4sup>, a 50-fold increase in comparison with the same type of FTJs with metal electrodes. The effect stems from the reversible accumulation-depletion of the majority carriers in the MoS<sub>2sub> electrode in response to ferroelectric switching, which alters the barrier at the MoS<sub>2sub>–BaTiO<sub>3sub> interface. Continuous tunability of resistive states realized via stable sequential domain structures in BaTiO<sub>3sub> adds memristive functionality to the hybrid FTJs. The use of narrow band 2D semiconductors in conjunction with ferroelectric films provides a novel pathway for development of the electronic devices with enhanced performance.