Spin Relaxation in Single-Layer Graphene with Tunable Mobility

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• 作者：Wei Han ; Jen-Ru Chen ; Deqi Wang ; Kathleen M. McCreary ; Hua Wen ; Adrian G. Swartz ; Jing Shi ; Roland K. Kawakami
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：July 11, 2012
• 年：2012
• 卷：12
• 期：7
• 页码：3443-3447
• 全文大小：336K
• 年卷期：v.12,no.7(July 11, 2012)
• ISSN：1530-6992

文摘

Graphene is an attractive material for spintronics due to theoretical predictions of long spin lifetimes arising from low spin鈥搊rbit and hyperfine couplings. In experiments, however, spin lifetimes in single-layer graphene (SLG) measured via Hanle effects are much shorter than expected theoretically. Thus, the origin of spin relaxation in SLG is a major issue for graphene spintronics. Despite extensive theoretical and experimental work addressing this question, there is still little clarity on the microscopic origin of spin relaxation. By using organic ligand-bound nanoparticles as charge reservoirs to tune the mobility between 2700 and 12鈥?00 cm²/(V s), we successfully isolate the effect of charged impurity scattering on spin relaxation in SLG. Our results demonstrate that, while charged impurities can greatly affect mobility, the spin lifetimes are not affected by charged impurity scattering.

Keywords:

Graphene; spintronics; spin relaxation; mobility; charged impurity scattering