Influence of pH on the Quantum-Size-Controlled Photoelectrochemical Etching of Epitaxial InGaN Quantum Dots

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• 作者：Xiaoyin Xiao ; Ping Lu ; Arthur J. Fischer ; Michael E. Coltrin ; George T. Wang ; Daniel D. Koleske ; Jeffrey Y. Tsao
• 刊名：Journal of Physical Chemistry C
• 出版年：2015
• 出版时间：December 17, 2015
• 年：2015
• 卷：119
• 期：50
• 页码：28194-28198
• 全文大小：322K
• ISSN：1932-7455

文摘

Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In₂O₃ and/or Ga₂O₃) form which interfere with quantum dot formation. At pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.