Controlled Heterogeneous Nucleation and Growth of Germanium Quantum Dots on Nanopatterned Silicon Dioxide and Silicon Nitride Substrates

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• 作者：Kuan-Hung Chen ; Chung-Yen Chien ; Wei-Ting Lai ; Tom George ; Axel Scherer ; Pei-Wen Li
• 刊名：Crystal Growth & Design
• 出版年：2011
• 出版时间：July 6, 2011
• 年：2011
• 卷：11
• 期：7
• 页码：3222-3226
• 全文大小：1072K
• 年卷期：v.11,no.7(July 6, 2011)
• ISSN：1528-7505

文摘

Controlled heterogeneous nucleation and growth of Ge quantum dots (QDs) are demonstrated on SiO₂/Si₃N₄ substrates by means of a novel fabrication process of thermally oxidizing nanopatterned SiGe layers. The otherwise random self-assembly process for QDs is shown to be strongly influenced by the nanopatterning in determining both the location and size of the QDs. Ostwald ripening processes are observed under further annealing at the oxidation temperature. Both nanopattern oxidation and Ostwald ripening offer additional mechanisms for lithography for controlling the size and placement of the QDs.