In-Situ Chloride-Generated Route to Different AlN Nanostructures on Si Substrate

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• 作者：Leshu Yu ; Ning Liu ; Chengyu He ; Qiang Wu ; Zheng Hu
• 刊名：Journal of Physical Chemistry C
• 出版年：2009
• 出版时间：August 13, 2009
• 年：2009
• 卷：113
• 期：32
• 页码：14245-14248
• 全文大小：277K
• 年卷期：v.113,no.32(August 13, 2009)
• ISSN：1932-7455

文摘

In situ chloride-generated route has been extended to prepare AlN nanostructures on Si substrate in the moderate temperature range of 680−800 °C. Different AlN nanostructures, including polycrystalline films, nanoflowers, nanoballs as well as quasi-aligned nanowires, have been conveniently obtained by regulating reaction temperature or changing reaction procedure. On the basis of the morphological evolution of the products and the involved chemical reactions, the growth process of this route was well discussed accordingly, and the low-temperature advantage could be attributed to the generation of the intermediate AlCl. The interesting results in this study indicate the wide potential applications of the in situ chloride-generated route for preparing many other advanced nanomaterials.