Volatilize-Controlled Oriented Growth of the Single-Crystal Layer for Organic Field-Effect Transistors

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• 作者：Haoyan Zhao ; Dong Li ; Guifang Dong ; Lian Duan ; Xiaohui Liu ; Liduo Wang
• 刊名：Langmuir
• 出版年：2014
• 出版时间：October 14, 2014
• 年：2014
• 卷：30
• 期：40
• 页码：12082-12088
• 全文大小：435K
• ISSN：1520-5827

文摘

We demonstrate a solution method of volatilize-controlled oriented growth (VOG) to fabricate aligned single crystals of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) on a Si/SiO₂ substrate. Through controlling the evaporation rate of the solvent, large-area-aligned single-crystal layers can be achieved on several substrates at the same time, covering over 90% on 2 脳 1 cm substrates. The method provides a low-cost, maneuverable technology, which has potential to be used in batch production. We find that the atmosphere of the solvent with high dissolving capacity is in favor of aligned single-crystal growth. Besides, the growth mechanism of the VOG method is investigated in this paper. Top-contact organic field-effect transistors based on the single crystals of TIPS pentacene are achieved on a Si/SiO₂ substrate. The optimal device exhibits a field-effect mobility of 0.42 cm² V^鈥? s^鈥? and an on/off current ratio of 10⁵. Our research indicates that the VOG method is promising in single-crystal growth on a Si/SiO₂ substrate for commercial production.