High-Throughput Screening of Si鈥揘i Flux for SiC Solution Growth Using a High-Temperature Laser Microscope Observation and Secondary Ion Mass Spectroscopy Depth Profiling
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- 作者：Shingo Maruyama ; Aomi Onuma ; Kazuhisa Kurashige ; Tomohisa Kato ; Hajime Okumura ; Yuji Matsumoto
- 刊名：ACS Combinatorial Science
- 出版年：2013
- 出版时间：June 10, 2013
- 年：2013
- 卷：15
- 期：6
- 页码：287-290
- 全文大小：346K
- 年卷期：v.15,no.6(June 10, 2013)
- ISSN：2156-8944
文摘
Screening of Si-based flux materials for solution growth of SiC single crystals was demonstrated using a thin film composition-spread technique. The reactivity and diffusion of carbon in a composition spread of the flux was investigated by secondary ion mass spectroscopy depth profiling of the annealed flux thin film spread on a graphite substrate. The composition dependence of the chemical interaction between a seed crystal and flux materials was revealed by high-temperature thermal behavior observation of the flux and the subsequent morphological study of the surface after removing the flux using atomic force microscopy. Our new screening approach is shown to be an efficient process for understanding flux materials for SiC solution growth.