Cost-Effective, Transfer-Free, Flexible Resistive Random Access Memory Using Laser-Scribed Reduced Graphene Oxide Patterning Technology

详细信息    查看全文

• 作者：He Tian ; Hong-Yu Chen ; Tian-Ling Ren ; Cheng Li ; Qing-Tang Xue ; Mohammad Ali Mohammad ; Can Wu ; Yi Yang ; H.-S Philip Wong
• 刊名：Nano Letters
• 出版年：2014
• 出版时间：June 11, 2014
• 年：2014
• 卷：14
• 期：6
• 页码：3214-3219
• 全文大小：409K
• 年卷期：v.14,no.6(June 11, 2014)
• ISSN：1530-6992

文摘

Laser scribing is an attractive reduced graphene oxide (rGO) growth and patterning technology because the process is low-cost, time-efficient, transfer-free, and flexible. Various laser-scribed rGO (LSG) components such as capacitors, gas sensors, and strain sensors have been demonstrated. However, obstacles remain toward practical application of the technology where all the components of a system are fabricated using laser scribing. Memory components, if developed, will substantially broaden the application space of low-cost, flexible electronic systems. For the first time, a low-cost approach to fabricate resistive random access memory (ReRAM) using laser-scribed rGO as the bottom electrode is experimentally demonstrated. The one-step laser scribing technology allows transfer-free rGO synthesis directly on flexible substrates or non-flat substrates. Using this time-efficient laser-scribing technology, the patterning of a memory-array area up to 100 cm² can be completed in 25 min. Without requiring the photoresist coating for lithography, the surface of patterned rGO remains as clean as its pristine state. Ag/HfO_x/LSG ReRAM using laser-scribing technology is fabricated in this work. Comprehensive electrical characteristics are presented including forming-free behavior, stable switching, reasonable reliability performance and potential for 2-bit storage per memory cell. The results suggest that laser-scribing technology can potentially produce more cost-effective and time-effective rGO-based circuits and systems for practical applications.