Reversible Fermi Level Tuning of a Sb2Te3 Topological Insulator by Structural Deformation

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• 作者：Sang Han Park ; Jimin Chae ; Kwang Sik Jeong ; Tae-Hyeon Kim ; Hyejin Choi ; Mann-Ho Cho ; Inwoong Hwang ; Myung-Ho Bae ; Chul Kang
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：June 10, 2015
• 年：2015
• 卷：15
• 期：6
• 页码：3820-3826
• 全文大小：391K
• ISSN：1530-6992

文摘

For three-dimensional (3D) topological insulators that have a layered structure, strain was used to control critical physical properties. Here, we show that tensile strain decreases bulk carrier density while accentuating transport of topological surface state using temperature-dependent resistance and magneto-resistance measurements, terahertz-time domain spectroscopy and density functional theory calculations. The induced strain was confirmed by transmittance X-ray scattering measurements. The results show the possibility of reversible topological surface state device control using structural deformation.