Electrostatically Reversible Polarity of Ambipolar 伪-MoTe2 Transistors

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• 作者：Shu Nakaharai ; Mahito Yamamoto ; Keiji Ueno ; Yen-Fu Lin ; Song-Lin Li ; Kazuhito Tsukagoshi
• 刊名：ACS Nano
• 出版年：2015
• 出版时间：June 23, 2015
• 年：2015
• 卷：9
• 期：6
• 页码：5976-5983
• 全文大小：533K
• ISSN：1936-086X

文摘

A doping-free transistor made of ambipolar 伪-phase molybdenum ditelluride (伪-MoTe₂) is proposed in which the transistor polarity (p-type and n-type) is electrostatically controlled by dual top gates. The voltage signal in one of the gates determines the transistor polarity, while the other gate modulates the drain current. We demonstrate the transistor operation experimentally, with electrostatically controlled polarity of both p- and n-type in a single transistor.