Preparation of Large-Area Uniform Silicon Nanowires Arrays through Metal-Assisted Chemical Etching

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• 作者：Ming-Liang Zhang ; Kui-Qing Peng ; Xia Fan ; Jian-Sheng Jie ; Rui-Qin Zhang ; Shuit-Tong Lee ; Ning-Bew Wong
• 刊名：Journal of Physical Chemistry C
• 出版年：2008
• 出版时间：March 27, 2008
• 年：2008
• 卷：112
• 期：12
• 页码：4444 - 4450
• 全文大小：1259K
• 年卷期：v.112,no.12(March 27, 2008)
• ISSN：1932-7455

文摘

A facile fabricating method has been established for large-area uniform silicon nanowires arrays. All siliconnanowires obtained were single crystals and epitaxial on the substrate. Six kinds of silicon wafers with differenttypes, surface orientations, and doping levels were utilized as starting materials. With the catalysis of silvernanoparticles, room-temperature mild chemical etching was conducted in aqueous solution of hydrofluoricacid (HF) and hydrogen peroxide (H₂O₂). The corresponding silicon nanowires arrays with differentmorphologies were obtained. The silicon nanowires possess the same type and same doping level of thestarting wafer. All nanowires on the substrate have the same orientation. For instance, both (100)- and (111)-oriented p-type wafers produced silicon nanowires in the (100) direction. For every kind of silicon wafer, theeffect of etching conditions, such as components of etchant, temperature, and time, were systemicallyinvestigated. This is an appropriate method to produce a large amount of silicon nanowires with definedtype, doping level, and growth direction for industrial applications.