Charge Noise in Liquid-Gated Single-Wall Carbon Nanotube Transistors

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• 作者：Jaan Mä ; nnik ; Iddo Heller ; Anne M. Janssens ; Serge G. Lemay ; Cees Dekker
• 刊名：Nano Letters
• 出版年：2008
• 出版时间：February 2008
• 年：2008
• 卷：8
• 期：2
• 页码：685 - 688
• 全文大小：120K
• 年卷期：v.8,no.2(February 2008)
• ISSN：1530-6992

文摘

The noise properties of single-walled carbon nanotube transistors (SWNT-FETs) are essential for the performance of electronic circuits andsensors. Here, we investigate the mechanism responsible for the low-frequency noise in liquid-gated SWNT-FETs and its scaling with thelength of the nanotube channel down to the nanometer scale. We show that the gate dependence of the noise amplitude provides strongevidence for a recently proposed charge-noise model. We find that the power of the charge noise scales as the inverse of the channel lengthof the SWNT-FET. Our measurements also show that surprisingly the ionic strength of the surrounding electrolyte has a minimal effect on thenoise magnitude in SWNT-FETs.