Facile Formation of Graphene P鈥揘 Junctions Using Self-Assembled Monolayers

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• 作者：Jose Baltazar ; Hossein Sojoudi ; Sergio A. Paniagua ; Janusz Kowalik ; Seth R. Marder ; Laren M. Tolbert ; Samuel Graham ; Clifford L. Henderson
• 刊名：The Journal of Physical Chemistry C
• 出版年：2012
• 出版时间：September 13, 2012
• 年：2012
• 卷：116
• 期：36
• 页码：19095-19103
• 全文大小：464K
• 年卷期：v.116,no.36(September 13, 2012)
• ISSN：1932-7455

文摘

Monolithic and patterned aminopropyltriethoxysilane (APTES) layers are used to create n-doped graphene, graphene p鈥搉 junctions, and FET devices containing p鈥搉 junctions in the device channel through transfer of CVD graphene onto APTES coated substrates. APTES doping is shown to not result in introduction of defects. I鈥?i>V measurements of FET devices containing patterned APTES layers show it is possible to control the position of the two current minima (two Dirac points) in the ambipolar p鈥搉 junction.