Adopting Novel Strategies in Achieving High-Performance Single-Layer Network Structured ZnO Nanorods Thin Film Transistors

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• 作者：Ji-Hyeon Park ; Jee Ho Park ; Pranab Biswas ; Do Kyun Kwon ; Sun Woong Han ; Hong Koo Baik ; Jae-Min Myoung
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：May 11, 2016
• 年：2016
• 卷：8
• 期：18
• 页码：11564-11574
• 全文大小：633K
• 年卷期：0
• ISSN：1944-8252

文摘

High-performance, solution-processed transparent and flexible zinc oxide (ZnO) nanorods (NRs)-based single layer network structured thin film transistors (TFTs) were developed on polyethylene terephthalate (PET) substrate at 100 °C. Keeping the process-temperature under 100 °C, we have improved the device performance by introducing three low temperature-based techniques; regrowing ZnO to fill the void spaces in a single layer network of ZnO NRs, passivating the back channel with polymer, and adopting ZrO₂ as the high-k dielectric. Notably, high-k amorphous ZrO₂ was synthesized and deposited using a novel method at an unprecedented temperature of 100 °C. Using these methods, the TFTs exhibited a high mobility of 1.77 cm²/V·s. An insignificant reduction of 2.18% in mobility value after 3000 cycles of dynamic bending at a radius of curvature of 20 mm indicated the robust mechanical nature of the flexible ZnO NRs SLNS TFTs.