用户名: 密码: 验证码:
New BEDT-TTF/[Fe(C5O5)3]3- Hybrid System: Synthesis, Crystal Structure, and Physical Properties of a Chirality-Induced 详细信息    查看全文
文摘
The paramagnetic and chiral anion [Fe(C5O5)3]3- (C5O52- = croconate) has been combined with the organic donorBEDT-TTF (=ET = bis(ethylenedithio)tetrathiafulvalene) to synthesize a novel paramagnetic semiconductor withthe first chirality-induced phase, -(BEDT-TTF)5[Fe(C5O5)3]·5H2O (1), and one of the few known paramagneticmolecular metals, -(BEDT-TTF)5[Fe(C5O5)3]·C6H5CN (2). Both compounds present layers of BEDT-TTF molecules,with the or packing modes, alternating with layers containing the high-spin S = 5/2 Fe(III) anions and solventmolecules. In the phase, the alternation of the chiral [Fe(C5O5)3]3- anions along the direction perpendicular tothe BEDT-TTF chains induces an alternation of the tilt angle of the BEDT-TTF molecules, giving rise to the observed phase. The phase presents a semiconductor behavior with a high room-temperature conductivity (6 S·cm-1)and an activation energy of 116 meV. The phase presents a metallic behavior down to ca. 120 K, where acharge localization takes place with a reentrance to the metallic state below ca. 20 K followed by a metal-semiconductor transition at ca. 10 K. The magnetic properties are dominated by the paramagnetic S = 5/2[Fe(C5O5)3]3- anion with an extra Pauli-type paramagnetism in the metallic phase. The ESR spectra confirm thepresence of the high-spin Fe(III)-containing anion and show a progressive localization in the organic sublatticealong with an antiferromagnetic coupling below ca. 120 K that, in the metallic phase, could be at the origin ofthe transition from the metallic to the activated conductivity regime. The correlation between crystal structure andconductivity behavior has been studied by means of tight-binding band structure calculations which provide arationalization of the charge distribution and conductivity results.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700