RuO
2 films were deposited on SiO
2 (300 nm)/N++Si substrates using radio frequency magnetron sputtering at room temperature. As-deposited RuO
2 films were annealed at different temperatures (100, 300, and 500 掳C) and ambients (Ar, O
2 and vacuum), and the resulting effects on the electrical and physical properties of RuO
2 films were characterized. The effect of annealing atmosphere was negligible, however the temperature highly influenced the resistivity and crystallinity of RuO
2 films. RuO
2 films annealed at high temperature exhibited lower resistivity and higher crystallinity than as-deposited RuO
2. To investigate the possibility to use RuO
2 film as alternative electrodes in flexible devices, as-deposited and annealed RuO
2 films were applied as the source/drain (S/D) electrodes in organic thin film transistor (OTFT), catalytic electrodes in dye sensitized solar cell (DSSC) and as the hole-injection buffer layer (HIL) in organic photovoltaic (OPV). Except for OTFTs (渭 鈮?0.45 cm
2/(V s) and on/off ratio 鈮?5脳 10
5) with RuO
2 S/D electrodes, the DSSC and OPV (3.5% and 2.56%) incorporating annealed RuO
2 electrodes showed higher performance than those with as-deposited RuO
2 electrodes (3.0% and 1.61%, respectively).
Keywords:
pentacene thin film transistor; annealing process; ruthenium oxide; work-function; dye sensitized solar cell; organic photovoltaic