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Direct Formation of SiO2 Nanohole Arrays via Iron Nanoparticle-Induced Carbothermal Reduction
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文摘
Hexagonally patterned SiO<sub>2sub> nanohole arrays having sub-10 nm of width were directly formed via carbothermal reduction of SiO<sub>2sub> with carbon-dissolved iron nanoparticles (NPs) (C(on iron NPs, s) + SiO<sub>2sub>(s) ↔ SiO(g) + CO(g)). Iron NPs prepared by hydroxylamine-mediated synthesis method resulted in not only nanoholes but also nanotrenches because the diameter of these iron NPs is suitable for the growth of single-walled carbon nanotubes (SWNTs) that further react with underneath SiO<sub>2sub> to produce nanotrenches. Higher yields of nanoholes were obtained by using larger-sized iron NPs (diameter: 3−8 nm) prepared from ferritins and by reducing the amount of active carbon precursor sources during the reaction, by which the growth of SWNTs were substantially suppressed. SiO<sub>2sub> nanohole arrays were then obtained from hexagonally self-arrayed iron NPs, which were fabricated using polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) micelles. In addition to the reactivity of carbothermal reduction, interparticular distance of the patterned iron NPs turned out to be a key factor to successfully form nanohole arrays. The interparticular distance was controlled by changing the composition of PS-b-P2VP micelles.

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