Metal-Organic Chemical Vapor Deposition of Indium Selenide Thin Films

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• 作者：Sarah L. Stoll and and Andrew R. Barron
• 刊名：Chemistry of Materials
• 出版年：1998
• 出版时间：February 1998
• 年：1998
• 卷：10
• 期：2
• 页码：650 - 657
• 全文大小：254K
• 年卷期：v.10,no.2(February 1998)
• ISSN：1520-5002

文摘

Indium selenide (InSe) thin films have been grown at 230-420C="/images/entities/deg.gif">C by low-pressure metal-organic chemical vapor deposition (MOCVD) using the single-sourceprecursors[(^tBu)₂In(-Se^tBu)]₂ and[(Me₂EtC)In(₃-Se)]₄.Characterization of the films by energy-dispersiveX-rayanalysis (EDX) showed those grown from[(^tBu)₂In(-Se^tBu)]₂to be indium rich, while thosegrown from[(Me₂EtC)In(₃-Se)]₄are stoichiometric InSe. Transmission electronmicroscopy(TEM) indicates that the film morphology and crystallinity are highlydependent on theprecursor and the deposition temperature. At low temperatures<330 C ball-like morphologies are observed, while deposition at 350-370 C results in highlycrystalline texturedfilms. Use of[(^tBu)In(₃-Se)]₄as the precursor at 320-420 C results in indium metalfilms.The relationship between the precursor's structure and thefilm's morphology and chemicalcomposition are discussed. The efficacy of the single-sourceprecursor approach is consideredwith respect to elemental composition, phase formation, and filmmorphology.