An Approach for an Advanced Anode Interfacial Layer with Electron-Blocking Ability to Achieve High-Efficiency Organic Photovoltaics

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• 作者：Jun-Seok Yeo ; Jin-Mun Yun ; Minji Kang ; Dongyoon Khim ; Seung-Hoon Lee ; Seok-Soon Kim ; Seok-In Na ; Dong-Yu Kim
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2014
• 出版时间：November 26, 2014
• 年：2014
• 卷：6
• 期：22
• 页码：19613-19620
• 全文大小：431K
• ISSN：1944-8252

文摘

The interfacial properties of PEDOT:PSS, pristine r-GO, and r-GO with sulfonic acid (SR-GO) in organic photovoltaic are investigated to elucidate electron-blocking property of PEDOT:PSS anode interfacial layer (AIL), and to explore the possibility of r-GO as electron-blocking layers. The SR-GO results in an optimized power conversion efficiency of 7.54% for PTB7-th:PC₇₁BM and 5.64% for P3HT:IC₆₁BA systems. By combining analyses of capacitance鈥搗oltage and photovoltaic-parameters dependence on light intensity, it is found that recombination process at SR-GO/active film is minimized. In contrast, the devices using r-GO without sulfonic acid show trap-assisted recombination. The enhanced electron-blocking properties in PEDOT:PSS and SR-GO AILs can be attributed to surface dipoles at AIL/acceptor. Thus, for electron-blocking, the AIL/acceptor interface should be importantly considered in OPVs. Also, by simply introducing sulfonic acid unit on r-GO, excellent contact selectivity can be realized in OPVs.

Keywords:

organic solar cells; graphene oxide; electron-blocking; interfacial layer; charge recombination