Highly Conducting, Transparent, and Flexible Indium Oxide Thin Film Prepared by Atomic Layer Deposition Using a New Liquid Precursor Et2InN(SiMe3)2

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• 作者：Wan Joo Maeng ; Dong-won Choi ; Kwun-Bum Chung ; Wonyong Koh ; Gi-Yeop Kim ; Si-Young Choi ; Jin-Seong Park
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2014
• 出版时间：October 22, 2014
• 年：2014
• 卷：6
• 期：20
• 页码：17481-17488
• 全文大小：520K
• ISSN：1944-8252

文摘

Highly conductive indium oxide films, electrically more conductive than commercial sputtered indium tin oxide films films, were deposited using a new liquid precursor Et₂InN(SiMe₃)₂ and H₂O by atomic layer deposition (ALD) at 225鈥?50 掳C. Film resistivity can be as low as 2.3 脳 10^鈥?鈥?.16 脳 10^鈥? 惟路cm (when deposited at 225鈥?50 掳C). Optical transparency of >80% at wavelengths of 400鈥?00 nm was obtained for all the deposited films. A self-limiting ALD growth mode was found 0.7 脜/cycle at 175鈥?50 掳C. X-ray photoelectron spectroscopy depth profile analysis showed pure indium oxide thin film without carbon or any other impurity. The physical and chemical properties were systematically analyzed by transmission electron microscopy, electron energy loss spectroscopy, X-ray diffraction, optical spectrometer, and hall measurement; it was found that the enhanced electrical conductivity is attributed to the oxygen deficient InO_x phases.

Keywords:

indium oxide; atomic layer deposition; transparent conducting oxide; resistivity