Pulsed Laser-Deposited MoS2 Thin Films on W and Si: Field Emission and Photoresponse Studies

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• 作者：Dattatray J. Late ; Parvez A. Shaikh ; Ruchita Khare ; Ranjit V. Kashid ; Minakshi Chaudhary ; Mahendra A. More ; Satishchandra B. Ogale
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2014
• 出版时间：September 24, 2014
• 年：2014
• 卷：6
• 期：18
• 页码：15881-15888
• 全文大小：487K
• ISSN：1944-8252

文摘

We report field electron emission investigations on pulsed laser-deposited molybdenum disulfide (MoS₂) thin films on W-tip and Si substrates. In both cases, under the chosen growth conditions, the dry process of pulsed laser deposition (PLD) is seen to render a dense nanostructured morphology of MoS₂, which is important for local electric field enhancement in field emission application. In the case of the MoS₂ film on silicon (Si), the turn-on field required to draw an emission current density of 10 渭A/cm² is found to be 2.8 V/渭m. Interestingly, the MoS₂ film on a tungsten (W) tip emitter delivers a large emission current density of 鈭?0 mA/cm² at a relatively lower applied voltage of 鈭?.8 kV. Thus, the PLD-MoS₂ can be utilized for various field emission-based applications. We also report our results of photodiode-like behavior in (n- and p- type) Si/PLD-MoS₂ heterostructures. Finally we show that MoS₂ films deposited on flexible kapton substrate show a good photoresponse and recovery. Our investigations thus hold great promise for the development of PLD MoS₂ films in application domains such as field emitters and heterostructures for novel nanoelectronic devices.

Keywords:

MoS₂; pulsed laser deposition; thin film; field emission; photodiode heterostructures