文摘
Various stacking patterns have been predicted in few-layer MoS2, strongly influencing its electronic properties. Bilayer MoS2 nanosheets have been synthesized by vapor phase growth. It is found that both A-B and A-A鈥?stacking configurations are present in bilayer MoS2 nanosheets through optical images, and the different stacking patterns exhibit distinctive line shapes in the Raman spectra. By theory calculation, it is also concluded that the A-B and A-A鈥?stacking are the most stable and lowest-energy stacking in the five predicted stacking patterns of bilayer MoS2 nanosheets, which proves the experimental observations.