Mechanism of Horizontally Aligned Growth of Single-Wall Carbon Nanotubes on R-Plane Sapphire
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- 作者：Qingkai Yu ; Guoting Qin ; Hao Li ; Zhenhai Xia ; Yibo Nian ; Shin-Shem Pei
- 刊名：Journal of Physical Chemistry B
- 出版年：2006
- 出版时间：November 16, 2006
- 年：2006
- 卷：110
- 期：45
- 页码：22676 - 22680
- 全文大小：632K
- 年卷期：v.110,no.45(November 16, 2006)
- ISSN：1520-5207
文摘
As a promising one-dimensional material for building nanodevices, single-wall carbon nanotubes (SWNTs)should be organized into a rational architecture on the substrate surface. In this study, horizontally alignedSWNTs with two alignment modes were synthesized on the same R-plane sapphire wafer by chemical vapordeposition with cationized ferritins as catalysts. In the middle part of the wafer, SWNTs were aligned on theR-plane sapphire in the direction [1
0]. At the edge of the wafer, SWNTs were aligned in the tangentialdirection to the wafer edge. The comparison of these two groups of SWNTs suggests the competition betweenthe two alignment modes and indicates that atomic steps in high density have superior influence on the SWNTs'alignment to the crystal structure on the surface of the sapphire substrate. A "raised-head" growth mechanismmodel is proposed to explain why catalysts can stay active during the horizontally aligned growth of relativelylong SWNTs with the strong interaction between SWNTs and the sapphire substrate.
0]. At the edge of the wafer, SWNTs were aligned in the tangentialdirection to the wafer edge. The comparison of these two groups of SWNTs suggests the competition betweenthe two alignment modes and indicates that atomic steps in high density have superior influence on the SWNTs'alignment to the crystal structure on the surface of the sapphire substrate. A "raised-head" growth mechanismmodel is proposed to explain why catalysts can stay active during the horizontally aligned growth of relativelylong SWNTs with the strong interaction between SWNTs and the sapphire substrate.