Pattern Design of and Epitaxial Growth on Patterned Sapphire Substrates for Highly Efficient GaN-Based LEDs

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• 作者：Zhiting Lin ; Hui Yang ; Shizhong Zhou ; Haiyan Wang ; Xiaosong Hong ; Guoqiang Li
• 刊名：Crystal Growth & Design
• 出版年：2012
• 出版时间：June 6, 2012
• 年：2012
• 卷：12
• 期：6
• 页码：2836-2841
• 全文大小：376K
• 年卷期：v.12,no.6(June 6, 2012)
• ISSN：1528-7505

文摘

This work represents a cost and time effective approach for pattern design of patterned sapphire substrates (PSS) for highly efficient GaN-based light emitting diodes (LEDs). Simulation is used to study how external quantum efficiency changes with the change in parameters of the unit hemisphere for LEDs fabricated on hemispherical PSS. Through a series of comparisons on simulation results, the most effective pattern to improve external quantum efficiency of LEDs on hemispherical PSS is revealed. The subsequent crystal growth of LED wafers demonstrates that both photoluminescence and electroluminescence intensities dramatically increase by about a half for LEDs grown on this pattern-optimized PSS compared to that of LEDs on non-PSS, which straight-forwardly proves the high efficiency of the optimized hemispherical patterns of PSS for improving LED efficacy.