The Effect of Boron Doping on Structure and Electrochemical Performance of Lithium-Rich Layered Oxide Materials

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• 作者：Jiatu Liu ; Shuangbao Wang ; Zhengping Ding ; Ruiqi Zhou ; Qingbing Xia ; Jinfang Zhang ; Libao Chen ; Weifeng Wei ; Peng Wang
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：July 20, 2016
• 年：2016
• 卷：8
• 期：28
• 页码：18008-18017
• 全文大小：918K
• 年卷期：0
• ISSN：1944-8252

文摘

Polyanion doping shows great potential to improve electrochemical performance of Li-rich layered oxide (LLO) materials. Here, by optimizing the doping content and annealing temperature, we obtained boron-doped LLO materials Li_1.2Mn_0.54Ni_0.13Co_0.13B_xO₂ (x = 0.04 and 0.06) with comprehensively improved performance (94% capacity retention after 100 cycles at 60 mA/g current density and a rate capability much higher compared to that of the pristine sample) at annealing temperatures of 750 and 650 °C, respectively, which are much lower than the traditional annealing temperature of similar material systems without boron. The scenario of the complex crystallization process was captured using Cs-corrected high-angle annular dark field scanning transmission electron microscopic (HAADF-STEM) imaging techniques. The existence of layered, NiO-type, and spinel-like structures in a single particle induced by boron doping and optimization of annealing temperature is believed to contribute to the remarkable improvement of cycling stability and rate capability.