Gate-Induced Carrier Delocalization in Quantum Dot Field Effect Transistors
详细信息 查看全文
- 作者：Michael E. Turk ; Ji-Hyuk Choi ; Soong Ju Oh ; Aaron T. Fafarman ; Benjamin T. Diroll ; Christopher B. Murray ; Cherie R. Kagan ; James M. Kikkawa
- 刊名：Nano Letters
- 出版年：2014
- 出版时间：October 8, 2014
- 年：2014
- 卷：14
- 期：10
- 页码：5948-5952
- 全文大小：268K
- ISSN：1530-6992
文摘
We study gate-controlled, low-temperature resistance and magnetotransport in indium-doped CdSe quantum dot field effect transistors. We show that using the gate to accumulate electrons in the quantum dot channel increases the 鈥渓ocalization product鈥?(localization length times dielectric constant) describing transport at the Fermi level, as expected for Fermi level changes near a mobility edge. Our measurements suggest that the localization length increases to significantly greater than the quantum dot diameter.