Semiconductor鈥揑nsulator鈥揝emiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure
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- 作者：Hyun Jeong ; Seungho Bang ; Hye Min Oh ; Hyeon Jun Jeong ; Sung-Jin An ; Gang Hee Han ; Hyun Kim ; Ki Kang Kim ; Jin Cheol Park ; Young Hee Lee ; Gilles Lerondel ; Mun Seok Jeong
- 刊名：ACS Nano
- 出版年：2015
- 出版时间：October 27, 2015
- 年：2015
- 卷：9
- 期：10
- 页码：10032-10038
- 全文大小：514K
- ISSN：1936-086X
文摘
We propose a semiconductor鈥搃nsulator鈥搒emiconductor (SIS) heterojunction diode consisting of monolayer (1-L) MoS2, hexagonal boron nitride (h-BN), and epitaxial p-GaN that can be applied to high-performance nanoscale optoelectronics. The layered materials of 1-L MoS2 and h-BN, grown by chemical vapor deposition, were vertically stacked by a wet-transfer method on a p-GaN layer. The final structure was verified by confocal photoluminescence and Raman spectroscopy. Current鈥搗oltage (I鈥?i>V) measurements were conducted to compare the device performance with that of a more classical p鈥搉 structure. In both structures (the p鈥搉 and SIS heterojunction diode), clear current-rectifying characteristics were observed. In particular, a current and threshold voltage were obtained for the SIS structure that was higher compared to that of the p鈥搉 structure. This indicated that tunneling is the predominant carrier transport mechanism. In addition, the photoresponse of the SIS structure induced by the illumination of visible light was observed by photocurrent measurements.