Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
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- 作者：Babak Fallahazad ; Kayoung Lee ; Sangwoo Kang ; Jiamin Xue ; Stefano Larentis ; Christopher Corbet ; Kyounghwan Kim ; Hema C. P. Movva ; Takashi Taniguchi ; Kenji Watanabe ; Leonard F. Register ; Sanjay K. Banerjee ; Emanuel Tutuc
- 刊名：Nano Letters
- 出版年：2015
- 出版时间：January 14, 2015
- 年：2015
- 卷：15
- 期：1
- 页码：428-433
- 全文大小：383K
- ISSN：1530-6992
文摘
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current鈥搗oltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.