Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon

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• 作者：Michael D. Thompson ; Aiyeshah Alhodaib ; Adam P. Craig ; Alex Robson ; Atif Aziz ; Anthony Krier ; Johannes Svensson ; Lars-Erik Wernersson ; Ana M. Sanchez ; Andrew R. J. Marshall
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：January 13, 2016
• 年：2016
• 卷：16
• 期：1
• 页码：182-187
• 全文大小：380K
• ISSN：1530-6992

文摘

Axially doped p–i–n InAs_0.93Sb_0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm² and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III–V semiconductors with silicon technology.