Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor

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• 作者：Elad D. Mentovich ; Natalie Rosenberg-Shraga ; Itsik Kalifa ; Michael Gozin ; Vladimiro Mujica ; Thorsten Hansen ; Shachar Richter
• 刊名：The Journal of Physical Chemistry C
• 出版年：2013
• 出版时间：April 25, 2013
• 年：2013
• 卷：117
• 期：16
• 页码：8468-8474
• 全文大小：331K
• 年卷期：v.117,no.16(April 25, 2013)
• ISSN：1932-7455

文摘

A vertical gate symmetrical molecular transistor is demonstrated. It includes self-assembled monolayer of ferrocene molecules chemically bonded to be a flat Au source and Au nanoparticles drain electrodes while gated with the central gate electrode. Using this configuration, we show that negative differential resistance, symmetrical behavior, and rectification effects can be tuned by controlling the gate voltage. The I鈥?i>V curves shift from symmetric to strongly rectifying over a gate voltage range of a few tenths of volts around a threshold value where the junction behaves symmetrically. This is due to charging of the nanoparticle contact, which modifies the spatial profile of the voltage across the junction, a fact that we have included in a simple theoretical model that explains our experimental results quite well. Our device design affords a new way to fine-tune the rectification of molecular devices in a way that does not necessarily involve the Coulomb charging of the wire.