In Situ TEM Creation and Electrical Characterization of Nanowire Devices
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- 作者：Christian Kalles酶e ; Cheng-Yen Wen ; Timothy J. Booth ; Ole Hansen ; Peter B酶ggild ; Frances M. Ross ; Kristian M酶lhave
- 刊名：Nano Letters
- 出版年：2012
- 出版时间：June 13, 2012
- 年：2012
- 卷：12
- 期：6
- 页码：2965-2970
- 全文大小：295K
- 年卷期：v.12,no.6(June 13, 2012)
- ISSN：1530-6992
文摘
We demonstrate the observation and measurement of simple nanoscale devices over their complete lifecycle from creation to failure within a transmission electron microscope. Devices were formed by growing Si nanowires, using the vapor鈥搇iquid鈥搒olid method, to form bridges between Si cantilevers. We characterize the formation of the contact between the nanowire and the cantilever, showing that the nature of the connection depends on the flow of heat and electrical current during and after the moment of contact. We measure the electrical properties and high current failure characteristics of the resulting bridge devices in situ and relate these to the structure. We also describe processes to modify the contact and the nanowire surface after device formation. The technique we describe allows the direct analysis of the processes taking place during device formation and use, correlating specific nanoscale structural and electrical parameters on an individual device basis.